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Table 3 Relationship between the timing of initial FET after a fresh IVF-ET attempt failure and pregnancy outcomes in different models

From: Immediate versus delayed frozen embryo transfer in women following a failed IVF-ET attempt: a multicenter randomized controlled trial

Pregnancy outcomes

Timing of initial FET

Crude model a

Adjusted model I b

Adjusted model II c

OR (95% CI)

P value

OR (95% CI)

P value

OR (95% CI)

P value

Positive pregnancy

Immediate FET group

Reference

 

Reference

 

Reference

 

Delayed FET group

1.09 (0.80to 1.48)

0.587

1.04 (0.75 to 1.44)

0.810

0.95 (0.67 to 1.35)

0.781

Clinical pregnancy

Immediate FET group

Reference

 

Reference

 

Reference

 

Delayed FET group

0.74 (0.54 to 1.02)

0.066

0.70 (0.50 to 0.97)

0.031

0.68 (0.47 to 0.97)

0.031

Ongoing pregnancy

Immediate FET group

Reference

 

Reference

 

Reference

 

Delayed FET group

0.78 (0.55 to 1.05)

0.096

0.71 (0.51 to 0.99)

0.048

0.68 (0.47 to 0.99)

0.041

Live birth

Immediate FET group

Reference

 

Reference

 

Reference

 

Delayed FET group

0.75 (0.54 to 1.04)

0.080

0.70 (0.50 to 0.98)

0.038

0.67 (0.46 to 0.96)

0.031

  1. Abbreviation: AMH Anti-müllerian hormone, BMI Body mass index, FSH Follicle stimulating hormone, OR Odds ratio, CI Confidence interval, FET Frozen embryo transfer, IVF-ET In vitro fertilization-embryo transfer, AFC Antral follicle count, COS Controlled ovarian stimulation; Gn, gonadotropin
  2. a No adjustments for other covariates
  3. b Adjusted for female age (< 35 yrs., ≥ 35 yrs.), moderate/severe depression prior to FET (yes, no), and high stress level prior to FET (yes, no)
  4. c Adjusted for female age (< 35 yrs., ≥ 35 yrs.), AMH (< 1.2 ng/ml, ≥ 1.2 ng/ml), BMI (< 24 kg/m2, ≥ 24 kg/m2), basic FSH (< 10 UI/L, ≥ 10 UI/L), AFC (< 10, ≥ 10), endometrial thickness before FET, No of oocytes retrieved (≤ 9, > 9), No of transferred frozen thawed embryos (single, double), method of fertilization (IVF, ICSI), moderate/severe depression prior to FET (yes, no), and high stress level prior to FET (yes, no)